Figure 8

Enhancer candidates overlap ES cell specific H3K27ac and H3K4me1 modifications. (A) Venn diagram depicting overlap of high confidence Enh candidates (probability ≥ 0.8) with distal (TSS +/− 1 kb removed) H3K27ac marks (active) and H3K27me3 marks (repressive). (B) Venn diagram depicting overlap of OCT4, SOX2, NANOG co-bound training regions with distal H3K27ac marks (active) and H3K27me3 marks (repressive). (C) The stacked bar plot shows the percent overlap of high confidence Enh candidates with distal H3K27ac/H3K4me1 in various cell types. The overlaps presented allow a 500 bp gap.